3rd Generation Intelligent Power Module (IPM) / S-Series

• High Efficiency:
  Low losses at high frequencies due to 3rd Generation IGBT chips (tp. saturation voltage is 1.8V for a 600V device, and 2.3V for a 1200V device.)
• High Frequency:
  Reduced EMI noise level and recovery losses due to the integrated fast and soft recovery diode.
• Direct Logic Drive
• Ruggedness:Improved reliability ensured by integrated protection such as over-current, over-temperature and under-voltage. Moreover, Real Time Controls short circuit protection suppresses high temperature rise and excessive surge voltage.